RF_GaN_HEMT_M1_DOE4_5_16x320um_5p12mm_28V_75mA

This is the small-signal measurement of a Gallium-Nitride-on-Silicon (GaN-Si) High-Electron-Mobility-Transistor (HEMT) device for radio frequency (RF) applications in power amplifiers. The specific name of the transistor technology is M1 and the transistor device is defined by the gate periphery of 5.12mm formed by 16 fingers with finger length of 320um. The transistor device is measured based on the test structure DOE4_5. For this measurement the transistor device is biased with drain supply voltage of 28V and the gate bias voltage is tuned such that the quiescent current is 76.6mA. The small-signal measurements are saved in the standard 2-port S-parameter format. The file format is also standard and predominantly used .s2p. The data provided cover the frequency range from 2 GHz to 8.5 GHz. The input/gate is at Port 1 and the output/drain is at Port 2.